“SiGe-BiCMOS Technologies with monolithic integrated THz-devices and photonic modules”

The strategies to increase the functionality of an integrated circuit or system by the integration of new components as an adequate scaling level is well known as the “Morethan-Moore” strategy in the semiconductor industry. These “MtM” approaches can be distinguished to monolithic and heterogeneous integration concepts, respectively. The latter one enables in general a high flexibility for the combination of different functionalities as CMOS, MEMS (micro-electro-mechanical systems) or III-V devices. However, a reliable packaging and therefore a sufficient yield can be a major concern for these systems. The monolithic integration of modules and devices with advanced functionality in a baseline CMOS process can overcome this concern. However these integration concepts have to consider issues during the integration of different modules like the interaction of process steps to the performance of the devices. Here we present different technology platforms with monolithic integrated modules like THz devices, i.e. complementary SiGe heterojunction bipolar transistors and silicon photonics components as waveguides, photo detectors and modulators.